RD12MVS1(2006) データシートの表示（PDF） - Mitsumi
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| RD12MVS1 Datasheet PDF : 0 Pages | |||
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
Vgg
Vdd
C2 C3
C1
W
W
RF-in 35mm
330pF
47pF
3mm
4.7kΩ
Contact
3.5mm
L1
10.8nH
100pF
4mm 12mm
15pF
Contact
L2
3.5mm 6.0mm 5.0mm 43.7nH
33pF
RF-out
RD12MVS1
24pF
20mm 25mm 330pF
68pF
Note: Board material - Teflon substrate
L: Enameled wire
Micro strip line width=2.2mm/50,εr:2.7,t=0.8mm L1:4Turns,D:0.43mm,φ1.66mm(outside diameter)
W: line width=1.0mm
Chip Condencer :GRM40
L2:6Turns,D:0.43mm,φ2.46mm(outside diameter)
C1, C2: 1000pF
Copper board spring t=0.1mm
C3: 10uF, 50V
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
f=175MHz Zout*
f=175MHz Zin*
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
RD12MVS1
MITSUBISHI ELECTRIC
4/7
10 Jan 2006
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