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R5F212E2NXXXFP データシートの表示(PDF) - Renesas Electronics

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R5F212E2NXXXFP
Renesas
Renesas Electronics Renesas
R5F212E2NXXXFP Datasheet PDF : 354 Pages
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R8C/2E Group, R8C/2F Group
1. Overview
Table 1.4 Specifications for R8C/2F Group (2)
Item
Specification
Flash Memory
• Programming and erasure voltage: VCC = 2.7 to 5.5 V
• Programming and erasure endurance: 10,000 times (data flash)
1,000 times (program ROM)
• Program security: ROM code protect, ID code check
• Debug functions: On-chip debug, on-board flash rewrite function
Operating Frequency/Supply
Voltage
f(XIN) = 20 MHz (VCC = 3.0 to 5.5 V),
f(XIN) = 10 MHz (VCC = 2.7 to 5.5 V)
Current consumption
Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)
Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)
Typ. 23 µA (VCC = 3.0 V, wait mode (peripheral clock off))
Typ. 0.7 µA (VCC = 3.0 V, stop mode)
Operating Ambient Temperature -20 to 85°C (N version)
-40 to 85°C (D version)(1)
Package
32-pin LQFP
Package code: PLQP0032GB-A (previous code: 32P6U-A)
NOTE:
1. Specify the D version if D version functions are to be used.
Rev.1.00 Dec 14, 2007 Page 5 of 332
REJ09B0349-0100

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