R6020FNX データシートの表示（PDF） - ROHM Semiconductor

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R6020FNX

Nch 600V 20A Power MOSFET

ROHM Semiconductor 

R6020FNX

Data Sheet

Body diode electrical characteristics (Source-Drain)(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Inverse diode continuous,

forward current

Inverse diode direct current,

pulsed

Forward voltage

IS *1

ISM *2

Tc = 25°C

VSD *6 VGS = 0V, IS = 20A

-

-

20

A

-

-

-

-

for80

A

1.5

V

Reverse recovery time

d Reverse recovery charge

Peak reverse recovery current

e Peak rate of fall of reverse

d recovery current

trr *6

Qrr *6

Irrm *6

IS = 20A , VGS=0V

di/dt = 100A/us

dirr/dt Tj = 25°C

75 105 135

-

0.33

-

-

6.3

-

-

1100

-

men igns Typical Transient Thermal Characteristics

Symbol

Value

Unit

m s Rth1

0.0789

e Rth2

0.579

K/W

Not RecNoew D Rth3

2.17

Symbol

Cth1

Cth2

Cth3

Value

0.00458

0.0603

0.549

ns

C

A

A/s

Unit

Ws/K

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4/13

2016.02 - Rev.D

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