R6020ANZ データシートの表示（PDF） - ROHM Semiconductor

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R6020ANZ

10V Drive Nch MOSFET

ROHM Semiconductor 

R6020ANZ

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

Gate-source leakage

IGSS

Drain-source breakdown voltage V(BR)DSS

Zero gate voltage drain current

IDSS

Gate threshold voltage

Static drain-source on-state

resistance

VGS (th)

RDS (on*)

Forward transfer admittance

l Yfs l*

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Turn-on delay time

td(on) *

Rise time

tr *

Turn-off delay time

td(off) *

Fall time

tf *

Total gate charge

Qg *

Gate-source charge

Qgs *

Gate-drain charge

Qgd *

*Pulsed

Min.

-

600

-

2.95

-

7

-

-

-

-

-

-

-

-

-

-

　

Typ.

-

-

-

-

0.17

-

2040

1660

70

40

60

230

70

65

10

25

Max.

100

-

100

4.15

0.22

-

-

-

-

-

-

-

-

-

-

-

Unit

Conditions

nA VGS=30V, VDS=0V

V ID=1mA, VGS=0V

A VDS=600V, VGS=0V

V VDS=10V, ID=1mA

 ID=10A, VGS=10V

S VDS=10V, ID=10A

pF VDS=25V

pF VGS=0V

pF f=1MHz

ns VDD 300V, ID=10A

ns VGS=10V

ns RL=30

ns RG=10

nC VDD 300V

nC ID=20A

nC VGS=10V

Body diode characteristics (Source-Drain)

Parameter

Forward voltage

Symbol Min.

VSD *

-

*Pulsed

Typ.

-

Max. Unit

Conditions

1.5

V Is=20A, VGS=0V

Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

2/5

2011.10 - Rev.A

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