FS0201BN データシートの表示（PDF） - Formosa Technology

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FS0201BN

SURFACE MOUNT SCR

Formosa Technology 

FS02...N

SOT223

(Plastic)

SURFACE MOUNT SCR

On-State Current

1.25 Amp

Gate Trigger Current

< 200 µA

Off-State Voltage

200 V ÷ 800 V

These series of Silicon Controlled

R ectifier use a high performance

PNPN technology.

These parts are intended for general

purpose applications where high gate

sensitivity is required using surface mount

technology.

Absolute Maximum Ratings, according to IEC publication No. 134

SYMBOL

IT(RMS)

IT(AV)

ITSM

ITSM

I2t

VGRM

IGM

PGM

PG(AV)

Tj

Tstg

Tsld

PARAMETER

On-state Current*

Average On-state Current*

Non-repetitive On-State Current

Non-repetitive On-State Current

Fusing Current

Peak Reverse Gate Voltage

Peak Gate Current

Peak Gate Dissipation

Gate Dissipation

Operating Temperature

Storage Temperature

Soldering Temperature

* with 5 cm2 copper (e= 35µm) surface under tab.

CONDITIONS

Half Cycle, Θ = 180 º, Ttab = 95 ºC

Half Cycle, Θ = 180 º, Ttab = 95 ºC

Half Cycle, 60 Hz, Tj = 25 ºC

Half Cycle, 50 Hz, Tj = 25 ºC

tp = 10ms, Half Cycle

IGR = 10 µA, Tj = 25 ºC

20 µs max.

20 µs max.

20 ms max.

10s max.

Min. Max. Unit

1.25

A

0.8

A

25

A

22.5

A

2.5

A2s

8

V

1.2

A

3

W

0.2 W

-40 +125 ºC

-40 +150 ºC

260 ºC

SYMBOL

PARAMETER

VDRM

VRRM

Repetitive Peak Off State

Voltage

CONDITIONS

RGK = 1 KΩ

VOLTAGE

Unit

B D MN

200 400 600 800 V

Jun - 02

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