BAV99W データシートの表示（PDF） - Siemens AG

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BAV99W

PNP Silicon High-Voltage Transistor

Siemens AG 

BAV 99W

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics per Diode

Breakdown voltage

I(BR) = 100 µA

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

Reverse current

VR = 70 V, TA = 25 °C

VR = 25 V, TA = 150 °C

VR = 70 V, TA = 150 °C

V(BR)

70

-

VF

-

-

-

-

-

-

-

-

IR

-

-

-

-

-

-

AC characteristics per Diode

Diode capacitance

CD

VR = 0 V, f = 1 MHz

-

-

Reverse recovery time

trr

IF = 10 mA, IR = 10 mA, RL = 100 Ω

trr measured at 1 mA

-

-

V

-

mV

715

855

1000

1250

µA

2.5

30

50

pF

1.5

ns

6

Semiconductor Group

2

Apr-03-1997

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