PS9661 データシートの表示（PDF） - NEC => Renesas Technology

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PS9661

NECs HIGH NOISE REDUCTION 25 Mbps CMOS OUTPUT TYPE 8-PIN DIP OPTOCOUPLER

NEC => Renesas Technology 

PS9661, PS9661L

ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions Unless Otherwise

Specified. Note That VDD1 = VDD2 = 5 V.)

Parameter

Symbol

Conditions

Diode

Low Level Supply Current IDD1L VI = 0 V

High Level Supply Current IDD1H VI = VDD1

Input Current

II

VI = 0 V or VI = VDD1

Detector Output Supply Current

IDD2H VI = VDD1

High Level Output Voltage

IDD2L

VOH

VI = 0 V

IO = −20 µA, VI = VIH

Low Level Output Voltage

IO = −4 mA, VI = VIH

VOL IO = 20 µA, VI = VIL

IO = 4 mA, VI = VIL

Coupled Isolation Resistance

RI-O VI-O = 1 kVDC, RH = 40 to 60%,

TA = 25°C

Isolation Capacitance

CI-O V = 0 V, f = 1 MHz, TA = 25°C

Propagation Delay Time

(H → L)

tPHL CL = 15 pF, CMOS Signal Levels

Propagation Delay Time

tPLH

(L → H)

Pulse Width

Pulse Width Distortion

(PWD)

PW

| tPHL-tPLH|

Propagation Delay Skew

tPSK

Rise Time

tr

Fall Time

tf

Common Mode

Transient Immunity at

High Level Output

CMH

VI = VDD1 = VDD2 = 5V,

VO > 0.8 VDD1, VCM = 1 kV, TA = 25°C

Common Mode

Transient Immunity at

Low Level Output

CML

VI = VDD1 = VDD2 = 5V, VI =0V

VO < 0.8 VDD1, VCM = 1 kV

MIN.

−10

4.4

4.0

1011

40

10

10

TYP.*1

7.5

0.15

7

5

5.0

4.8

0.01

0.32

1.3

20

23

3

9

8

20

20

MAX.

10.0

3.0

10

9

9

0.1

1.0

40

40

8

20

Unit Fig.

1

mA

2

µA

3, 4

5

mA

6

7

V

8

Ω

pF

9

ns

10

kV/µs

*1 Typical values at TA = 25°C

Preliminary Data Sheet

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