PMPB40SNA データシートの表示（PDF） - NXP Semiconductors.
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PMPB40SNA Datasheet PDF : 15 Pages
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NXP Semiconductors
PMPB40SNA
60 V N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
6
7
2
5
Graphic symbol
D
G
3
8
4
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa253
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMPB40SNA
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
PMPB40SNA
Marking code
1E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 10 V; Tsp = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
VGS = 10 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Min Max Unit
-
60
V
-20 20
V
-
12.9 A
-
6.8 A
-
3
A
-
23
A
PMPB40SNA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
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