PMD11K80 データシートの表示（PDF） - Inchange Semiconductor
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PMD11K80 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
PMD11K80
DESCRIPTION
·High DC current gain
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -80V(Min)
·Complement to type PMD10K80
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current -Continuous
-12
A
ICP
Collector Current-Peak
-20
A
IBB
Base Current
-0.2
A
PC
Collector Power Dissipation@TC=25℃
150
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX UNIT
1.17 ℃/W
isc Website：www.iscsemi.cn
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