PHB45NQ15T データシートの表示（PDF） - NXP Semiconductors.
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PHB45NQ15T Datasheet PDF : 13 Pages
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NXP Semiconductors
PHB45NQ15T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 3;
see Figure 1
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ≤ 10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 19.1 A;
drain-source avalanche Vsup ≤ 150 V; RGS = 50 Ω; tp = 0.1 ms; unclamped
energy
Min Max Unit
-
150 V
-
150 V
-20 20
V
-
31.9 A
-
45.1 A
-
90.2 A
-
230 W
-55 175 °C
-55 175 °C
-
45.1 A
-
90.2 A
-
180 mJ
120
Ider
(%)
80
03aa24
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
© NXP B.V. 2009. All rights reserved.
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