PBMB50B12C データシートの表示（PDF） - Nihon Inter Electronics
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PBMB50B12C Datasheet PDF : 3 Pages
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IGBT MODULE H-Bridge 50A 1200V
CIRCUIT
PBMB50B12C
OUTLINE DRAWING
P
G1
E1
U
G2
N
E2
P
N
G3
E3
V
G4
E4
PBMB50B12
G3
G5
E3
E5
V
W
G4
G6
E4
E6
PBMB50B12C
8- fasten- tab No 110
4- fasten-tab No 250
Dimension(mm)
Approximate Weight : 200g
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PBMB50B12C
Collector-Emitter Voltage
VCES
Gate - Emitter Voltage
VGES
Collector Current
DC
IC
1 ms
ICP
Collector Power Dissipation
PC
Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Isolation Voltage Terminal to Base AC, 1 min.)
VISO
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
FTOR
1200
+/ - 20
50
100
250
-40 to +150
-40 to +125
2500
2
-
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
ICES
VCE=1200V,VGE=0V
-
IGES
VGE=+/- 20V,VCE=0V
-
Collector-Emitter Saturation Voltage
VCE(sat) IC=50A,VGE=15V
-
Gate-Emitter Threshold Voltage
Input Capacitance
VGE(th) VCE=5V,IC=50mA
4.0
Cies VCE=10V,VGE=0V,f=1MHz
-
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr
VCC= 600V
-
ton
RL= 12 ohm
-
tf
RG= 20 ohm
-
toff
VGE= +/- 15V
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
IF
1 ms
IFM
50
100
Typ.
-
-
1.9
-
4200
0.25
0.40
0.25
0.80
Max.
1.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
V
V
A
W
°C
°C
V
N•m
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=50A,VGE=0V
IF=50A,VGE=-10V,di/dt=100A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min. Typ. Max. Unit
-
1.9
2.4
V
-
0.2
0.3
µs
Min. Typ. Max. Unit
-
-
-
-
0.5
1.0
°C/W
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