P9217 データシートの表示（PDF） - Hamamatsu Photonics

部品番号

コンポーネント説明

一致するリスト

P9217

PbS photoconductive detector

Hamamatsu Photonics 

PbS photoconductive detector P9217 series

s Spectral response

100

(Typ. T=25 ˚C)

80

60

40

20

0

1

2

3

4

5

WAVELENGTH (µm)

KIRDB0301EA

s S/N vs. chopping frequency

(Typ. Ta=25 ˚C)

10

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 4.8 µW/cm2

SUPPLY VOLTAGE: 15 V

tr: 200 µs

S/N

S

1

s S/N vs. supply voltage

800

(Typ. Ta=25 ˚C)

8

7

SIGNAL

600

6

5

400

4

NOISE

3

200

0

0

2

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 4.8 µW/cm2

CHOPPING FREQUENCY: 600 Hz

1

FREQUENCY BANDWIDTH: 60 Hz

0

10

20

30

40

50

60

SUPPLY VOLTAGE (V)

KIRDB0046EA

If voltage of higher than 60 V is applied,

the noise increases exponentially, de-

grading the S/N. The device should be

operated at 60 V or less.

s Photo sensitivity temperature characteristic

(Typ.)

10

1

N

0.1

101

102

103

CHOPPING FREQUENCY (Hz)

KIRDB0047EC

Increasing the chopping frequency re-

duces the 1/f noise and results in an S/N

improvement. The S/N can also be im-

proved by narrowing the noise bandwidth

using a lock-in amplifier.

s Dark resistance, rise time temperature characteristics

(Typ.)

10

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 4.8 µW/cm2

CHOPPING FREQUENCY: 600 Hz

SUPPLY VOLTAGE: 15 V

0.1

-10 0 10 20 30 40 50 60 70

ELEMENT TEMPERATURE (˚C)

KIRDB0302EB

Cooling the device enhances its sensi-

tivity, but the sensitivity also depends

on the load resistance in the circuit.

s Photo sensitivity linearity

102

(Typ. Ta=25 ˚C, FULLY ILLUMINATED)

RISE TIME

101

100

1 DARK

RESISTANCE

10-1

0.1

-10 0 10 20 30 40 50 60 70

ELEMENT TEMPERATURE (˚C)

KIRDB0303EB

2

10-2

DEPENDENT ON NEP

10-3

10-9

10-8

10-7

10-6

10-5

10-4

INCIDENT ENERGY (W/cm2)

KIRDB0050EA

By making the incident light spot smaller

than the active area, the upper limit of

the linearity becomes lower.

Share Link: