P4C164L-100P3I データシートの表示（PDF） - Semiconductor Corporation
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P4C164L-100P3I Datasheet PDF : 11 Pages
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P4C164L
CAPACITANCES(4)
(V = 5.0V, T = 25°C, F = 1.0 MHz)
CC
A
Symbol
Parameter
Test Conditions
Max
Unit
C
IN
Input Capacitance
VIN = 0V
7
pF
COUT
Output Capacitance
VOUT = 0V
9
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
ICC
Parameter
Dynamic Operating Current
Temperature Range
Ind. & Comm.
*
-80
-100
55
55
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e. CE and WE ≤ VIL (max), OE is high. Switching
inputs are 0V and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Unit
mA
-80
-100
Symbol
Parameter
Min
Max
Min
Max
Unit
tRC
Read Cycle Time
80
100
ns
tAA Address Access Time
80
100
ns
tAC
Chip Enable Access
80
Time
100
ns
t
Output Hold from
OH
10
10
ns
Address Change
t
Chip Enable to
LZ
10
10
Output in Low Z
ns
tHZ
Chip Disable to
30
Output in High Z
30
ns
tOE
Output Enable Low
40
to Data Valid
tOLZ Output Enable Low to
Low Z
5
5
tOHZ Output Enable High
20
to High Z
tPU
Chip Enable to Power
Up Time
0
0
40
ns
ns
20
ns
ns
tPD Chip Disable to Power
80
Down Time
100
ns
Document # SRAM116 REV B
Page 3 of 11
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