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P4C164L-100SILF データシートの表示(PDF) - Semiconductor Corporation

部品番号
コンポーネント説明
一致するリスト
P4C164L-100SILF
PYRAMID
Semiconductor Corporation PYRAMID
P4C164L-100SILF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
-80
Min
Max
tWC
Write Cycle Time
80
t
Chip Enable Time
CW
70
to End of Write
tAW
Address Valid to
70
End of Write
tAS
Address Set-up
0
Time
t
WP
Write Pulse Width
60
tAH
Address Hold Time
0
t
Data Valid to End
DW
40
of Write
tDH
Data Hold Time
0
tWZ
Write Enable to
30
Output in High Z
tOW
Output Active from
10
End of Write
WRITE CYCLE NO. 1 (WE CONTROLLED)(6)
-100
Min
Max
100
80
80
0
60
0
40
0
30
10
P4C164L
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
11.
CE
1
and
WE
must
be
LOW,
and
CE2
HIGH
for
WRITE
cycle.
12. OE is LOW for this WRITE cycle to show tWZ and tOW.
13.
If
CE
1
goes
HIGH,
or
CE2
goes
LOW,
simultaneously
with
WE
HIGH,
the output remains in a high impedance state.
14. Write Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM116 REV B
Page 5 of 11

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