P4C163-25CMB データシートの表示（PDF） - Semiconductor Corporation
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P4C163-25CMB Datasheet PDF : 12 Pages
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POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
ICC Dynamic Operating
Current – 25
VCC = Max., f = Max.,
Outputs Open
ICC Dynamic Operating
Current – 35, 45
VCC = Max., f = Max.,
Outputs Open
ISB Standby Power Supply
CE1 ≥ VIH or
Current (TTL Input Levels) CE2 ≤ VIL, VCC = Max.,
f = Max., Outputs Open
ISB1 Standby Power Supply
Current
(CMOS Input Levels)
CE1 ≥ VHC or
CE2 ≤ VLC, VCC = Max.,
f = 0, Outputs Open,
VIN ≤ VLC or VIN ≥ VHC
n/a = Not Applicable
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
P4C163
Min Max
—
145
—
125
—
120
—
95
—
40
—
35
—
20
—
18
P4C163/163L
P4C163L
Min
Max Unit
—
145 mA
—
N/A
—
120 mA
—
N/A
—
40 mA
—
N/A
—
1
mA
—
N/A
DATA RETENTION CHARACTERISTICS (P4C163L, Military Temperature Only)
Symbol
Parameter
Test Condition
Typ.*
Max
Min
VCC=
VCC=
Unit
2.0V 3.0V 2.0V 3.0V
VDR VCC for Data Retention
2.0
ICCDR Data Retention Current
CE1 ≥ VCC – 0.2V or
10
tCDR Chip Deselect to
Data Retention Time
CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V 0
or VIN ≤ 0.2V
tR†
Operation Recovery Time
tRC§
V
15 200 300 µA
ns
ns
*TA = +25°C
§tRC = Read Cycle Time
†This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
Document # SRAM120 REV C
Page 3 of 12
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