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P4C1024L-70PC データシートの表示(PDF) - Semiconductor Corporation

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一致するリスト
P4C1024L-70PC
PYRAMID
Semiconductor Corporation PYRAMID
P4C1024L-70PC Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
P4C1024L
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
VIN = 0V
VOUT = 0V
Max
7
9
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
*
-55
-70
**
-55
-70
Unit
Commercial
70
70
15
15
mA
ICC
Dynamic Operating Current
Industrial
85
85
25
25
mA
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE2 VIH (min), CE1 and WE VIL (max), OE is high. Switching
inputs are 0V and 3V.
**As above but @ f=1 MHz and VIL/ VIH = 0V/ VCC.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
-55
Min
Max
-70
Min
Max
Unit
tRC Read Cycle Time
55
70
ns
tAA Address Access Time
55
tAC
Chip Enable Access
Time
55
tOH
Output Hold from
Address Change
5
5
tLZ
Chip Enable to
Output in Low Z
10
10
tHZ
Chip Disable to
Output in High Z
20
tOE
Output Enable Low
to Data Valid
30
tOLZ
Output Enable Low to
Low Z
5
5
tOHZ
Output Enable High
to High Z
20
tPU
Chip Enable to Power
Up Time
0
0
tPD
Chip Disable to
Power Down Time
55
70
ns
70
ns
ns
ns
25
ns
35
ns
ns
25
ns
ns
70
ns
Document # SRAM125 REV C
Page 3 of 10

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