FQPF6N70 データシートの表示（PDF） - Fairchild Semiconductor
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FQPF6N70 Datasheet PDF : 8 Pages
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Typical Characteristics
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4
3
V = 10V
GS
V = 20V
GS
2
1
※ Note : T = 25℃
J
0
0
4
8
12
16
20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1600
1200
800
400
C
iss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. V = 50V
2. 25DS0μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25GS0μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
V = 140V
DS
10
VDS = 350V
V = 560V
DS
8
6
4
2
※ Note : I = 6.2 A
D
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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