BAW56T(2003) データシートの表示（PDF） - Infineon Technologies

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BAW56T
(Rev.:2003)

Silicon Switching Diode

Infineon Technologies 

BAW56...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I(BR) = 100 µA

V(BR)

85

-

-V

Reverse current

VR = 70 V

VR = 25 V, TA = 150 °C

VR = 70 V, TA = 150 °C

IR

µA

-

- 0.15

-

-

30

-

-

50

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 100 mA

IF = 150 mA

VF

mV

-

-

715

-

-

855

-

- 1000

-

- 1200

-

- 1250

AC Characteristics

Diode capacitance

CT

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

IF = 10 mA, IR = 10 mA, measured at IR = 1mA,

RL = 100 Ω

-

-

2 pF

-

-

4 ns

Test circuit for reverse recovery time

D.U.T.

Oscillograph

ΙF

Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,

Ri = 50Ω

Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF

EHN00019

3

Jun-03-2003

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