OH10010
GaAs Hall Devices
PD Ta
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
VH B
1 600
VC = 6 V
Ta = 25°C
1 400
1 200
1 000
800
600
400
200
0
0 0.2 0.4 0.6 0.8 1.0
Magnetic flux density B (T)
VH Ta
240
B = 1 kG
IC = 6 mA
200
160
120
80
40
0
−40 0
40 80 120
Ambient temperature Ta (°C)
RIN Ta
1 600
B=0
IC = 1 mA
1 400
1 200
1 000
800
600
400
200
0
−40 0
40 80 120
Ambient temperature Ta (°C)
VH IC
320
B = 1 kG
280
Ta = 25°C
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control current IC (mA)
VH VC
320
B = 1 kG
280
Ta = 25°C
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control voltage VC (V)
I Typical Drive Circuit
+9 V
4
31
2
−9 V
2
+9 V
−
+
−9 V
−V
+V