NTE76 データシートの表示（PDF） - NTE Electronics

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NTE76

Silicon NPN Transistor Broadband CATV Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Dynamic Characteristics

Collector Output Capacitance

Collector Input Capacitance

Functional Test

Noise Figure Narrow Band

Broad Band

hFE VCE = 20V, IC = 70mA

30 − 300

Cob VCB = 30V, IE = 0, f = 1MHz

Cib VEB = 0.5V, IC = 0, f = 1MHz

− 2.6 4.0 pF

− 8.0 10 pF

NFNB

NFBB

VCE = 10V, IC = 10mA,

f = 200MHz

VCE = 22V, IC = 70mA,

f = 216MHz

− 2.7 − dB

− 7.5 9.0 dB

Power Gain at Optimum Noise Figure

Cross−Modulation

Second Order Distortion

GVE VCE = 22V, IC = 70mA,

f = 260MHz

X−MOD

2nd O

VCE = 22V, IC = 70mA,

PO = +50dBmV, Note 2

VCE = 22V, IC = 70mA,

PO = +50dBmV, Note 3

10 11 − dB

− −53 −50 dB

− −55 −50 dB

Note 2. 12 Channel Flat −− NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW

Note 3. Channel 2 and Channel G Intermod Product on Channel 13

45°

.034 (0.88) Max

Emitter

Collector

.500

(12.7)

Min

Emitter

.210 (5.33) Max

Base

.290 (7.36) Dia Max

.017 (0.45) Max

.460 (11.68)

Max

.140 (3.55) Max

8−32 UNC−2A

.260 (6.60) Max

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