NE5520379A データシートの表示（PDF） - California Eastern Laboratories.

部品番号

コンポーネント説明

一致するリスト

NE5520379A

NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

California Eastern Laboratories. 

NE5520379A

TYPICAL PERFORMANCE CURVES (TA = 25°C)

OUTPUT POWER, DRAIN CURRENT

vs. GATE TO SOURCE VOLTAGE

36

VDS = 3.2 V

f = 915 MHz

Pout

Pin = 25 dBm

35

2 500

2 000

34

1 500

ID

33

1 000

32

500

31

0.0

1.0

0

2.0

3.0

4.0

Gate to Source Voltage, VGS (V)

OUTPUT POWER, DRAIN CURRENT

vs. GATE TO SOURCE VOLTAGE

33

VDS = 3.2 V

f = 1 785 MHz

Pin = 25 dBm

Pout

31

2 500

2 000

29

1 500

27

25

ID

1 000

500

23

0

0.0

1.0

2.0

3.0

4.0

Gate to Source Voltage, VGS (V)

Share Link: