NE5520279A-T1-A データシートの表示（PDF） - NEC => Renesas Technology
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NE5520279A-T1-A Datasheet PDF : 3 Pages
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PRELIMINARY DATA SHEET
3.2 V, 2 W, L&S BAND
MEDIUM POWER SILICON LD-MOSFET
NE5520279A
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE:
5.7x5.7x1.1 mm MAX
• HIGH OUTPUT POWER:
+32 dBm TYP
• HIGH LINEAR GAIN:
10 dB TYP @ 1.8 GHz
• HIGH POWER ADDED EFFICIENCY:
45% TYP at 1.8 GHz
• SINGLE SUPPLY:
2.4 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
1.5 ± 0.2
Source
Drain
Gate
Drain
0.4 ± 0.15
5.7 Max
0.8 Max
3.6 ± 0.2
DESCRIPTION
The NE5520279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.2 V DCS1800 handsets. It can be operated at up to 6 V for
higher power, Fixed Wireless Access applications. Die are
manufactured using NEC's NEWMOS technology (NEC's 0.6
µm WSi gate lateral MOSFET) and housed in a surface mount
package.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.2 V GSM/DCS1800 Class 1 Handsets
• 0.7-2.5 GHz FIXED WIRELESS ACCESS
• RETAIL BUSINESS RADIO
• SPECIAL MOBILE RADIO
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
POUT Output Power
GL
Linear Gain1
ηADD Power Added Efficiency
ID
Operating Drain Current
IGSS
Gate-to-Source Leakage Current
IDSS
Drain-to-Source Leakage Current
VTH
Gate Threshold Voltage
gm
Transconductance
BVDSS Drain-to-Source Breakdown Voltage
RTH
Thermal Resistance
UNITS
dBm
dB
%
mA
nA
nA
V
S
V
°C/W
NE5520279A
79A
MIN
TYP
MAX
30.5 32.0
10
45
800
100
100
1.0
1.4
2.0
1.3
15
18
10
TEST CONDITIONS
f = 1.8 GHz, VDS = 3.2 V,
IDSQ = 300 mA, PIN = 25 dBm, except
PIN = 10 dBm for Linear Gain1
VGSS = 5.0 V
VDSS = 8.5 V
VDS = 3.5 V, IDS = 1 mA
VDS = 3.5 V, IDS = 300 mA
IDSS = 10 A
Channel-to-Case
Notes:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
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