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NCV8668ABD150R2G データシートの表示(PDF) - ON Semiconductor

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NCV8668ABD150R2G Datasheet PDF : 21 Pages
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NCV8668
ELECTRICAL CHARACTERISTICS
Vin = 13.2 V, Cin = 0.1 mF, Cout = 2.2 mF, for typical values TJ = 25°C, for min/max values TJ = 40°C to 150°C; unless otherwise noted.
(Notes 10 and 11)
Parameter
Test Conditions
Symbol Min Typ Max Unit
Disable and Quiescent Current
Disable Current
Quiescent Current (Iq = Iin – Iout)
Current Limit Protection
VEN = 0 V,TJ < 85°C
Iout = 100 mA, TJ = 25°C
Iout = 100 mA, TJ v 125°C
IDIS
1
mA
Iq
mA
38
43
44
Current Limit
Short Circuit Current Limit
Reverse Output Current Protection
Vout = 0.96 x Vout_nom
Vout = 0 V
ILIM
205
525 mA
ISC
205
525 mA
Reverse Output Current Protection
PSRR
VEN = 0 V, Iout = 1 mA
Vout_rev
2
5.5
V
Power Supply Ripple Rejection (Note 13) f = 100 Hz, 0.5Vpp
Enable Thresholds
PSRR
60
dB
Enable Input Threshold Voltage
Logic High
Logic Low
Vth(EN)
V
3
0.8
Enable Input Current
Logic High
Logic Low
Window Watchdog
VEN = 5 V
VEN = 0 V, TJ < 85°C
mA
IEN_ON
3
5
IEN_OFF
0.5
1
Watchdog Mode Bit 1 Threshold Voltage
Voltage Increasing, Logic High
3.3 V
5.0 V
Voltage Decreasing, Logic Low
Watchdog Mode Bit 2 Threshold Voltage
Voltage Increasing, Logic High
3.3 V
5.0 V
Voltage Decreasing, Logic Low
Watchdog Input WDI Threshold Voltage
Voltage Increasing, Logic High
3.3 V
5.0 V
Voltage Decreasing, Logic Low
Watchdog Input WDI Current
Logic High
Logic Low
VWDI,H = 5 V
VWDI,L = 0 V, TJ < 85 °C
Watchdog Sampling Time
Fast:
Slow:
WM2 = L
WM1 = L AND WM2 = H
VWM1,H
VWM1,L
0.8
V
2.65
4.0
VWM2,H
VWM2,L
0.8
V
2.65
4.0
VWDI,H
VWDI,L
0.8
V
2.65
4.0
IWDI,H
IWDI,L
mA
3
4
0.5
1
tsam
0.4 0.5 0.6 ms
0.8 1.0 1.2
Ignore Window Time
Fast:
Slow:
WM2 = L
WM1 = L AND WM2 = H
tIW
25.6 32.0 38.4 ms
51.2 64.0 76.8
Open Window Time
Fast:
Slow:
WM2 = L
WM1 = L AND WM2 = H
tOW
25.6 32.0 38.4 ms
51.2 64.0 76.8
Closed Window Time
Fast:
Slow:
WM2 = L
WM1 = L AND WM2 = H
tCW
25.6 32.0 38.4 ms
51.2 64.0 76.8
10. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
11. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [TJ. Low duty
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
12. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.2 V. If Vout < 5 V, then VDO = Vin – Vout. Maximum dro-
pout voltage value is limited by minimum input voltage Vin = 4.5 V recommended for guaranteed operation at maximum output current.
13. Values based on design and/or characterization.
14. Recommended for typical trigger time. TWD = tCW + 1/2 * tOW
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