NCV8405A データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

一致するリスト

NCV8405A

Self-Protected Low Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8405, NCV8405A

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

Drain−to−Gate Voltage Internally Clamped

Gate−to−Source Voltage

Continuous Drain Current

Power Dissipation − SOT−223 Version

Power Dissipation − DPAK Version

Thermal Resistance − SOT−223 Version

Thermal Resistance − DPAK Version

(RG = 1.0 MW)

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

@ TT = 25°C (Note 1)

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

@ TC = 25°C (Note 1)

Junction−to−Ambient Steady State (Note 1)

Junction−to−Ambient Steady State (Note 2)

Junction−to−Tab Steady State (Note 1)

Junction−to−Ambient Steady State (Note 1)

Junction−to−Ambient Steady State (Note 2)

Junction−to−Case Steady State (Note 1)

VDSS

VDGR

VGS

ID

PD

RqJA

RqJA

RqJT

RqJA

RqJA

RqJT

42

V

42

V

"14

V

Internally Limited

W

1.0

1.7

11.4

2.0

2.5

40

°C/W

130

72

11

60

50

3.0

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, RG(ext) = 25 W, TJ = 25°C)

EAS

275

mJ

Load Dump Voltage

VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms)

VLD

53

V

Operating Junction Temperature

TJ

−40 to 150

°C

Storage Temperature

Tstg

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).

2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).

+

ID

IG

+

VGS

GATE

DRAIN

SOURCE

VDS

−

−

Figure 1. Voltage and Current Convention

http://onsemi.com

2

Share Link: