MWS11-GB11-X1 データシートの表示（PDF） - Microsemi Corporation
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MWS11-GB11-X1 Datasheet PDF : 6 Pages
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A MICROSEMI COMPANY
CONFIDENTIAL
MWS11-GB11-xx
InGaP HBT Gain Block
PREVIEW
Unless otherwise specified, the following specifications apply over the operating ambient temperature -40°C ≤ TA ≤ +85°C except where
otherwise noted. Test conditions: [Enter Test Conditions Here]
Parameter
Symbol
Test Conditions
POWER SUPPLY
Application Frequency Range
Linear Output Power
Output 3rd Order Intermod
Product*
Small-Signal Gain
Noise Figure
Supply Voltage
Supply Current
OVERALL
f
P1dB
IP3
G
NF
VCC
f=2GHz
f=1 GHz
f=1.5 GHz
Frequency Range
T=25°C, VD=5.5V, ICC=70mA
1dB Bandwidth
Gain
Gain Flatness
Noise Figure
Freq = 100MHz
Freq = 1000MHz
Freq = 2000MHz
Freq = 3000MHz
Freq = 4000MHz
Freq = 6000MHz
100MHz to 2000MHz
Freq = 1000MHz
Input VSWR
Output VSWR
Output IP3
Freq = 1000MHz
Output P1dB
Freq = 1000MHz
Reverse Isolation
Freq = 1000MHz
THERMAL
Maximum Measured Junction
Temp at DC Bias Conditions
TA = +85°C
TA = +85°C
Mean Time Between Failures
TA = +25°C
TA = -40°C
* Output power at 1dB gain compression point, f=1 GHz
† In accordance with Manufacturer design
MWS11-GB11-xx Units
Min Typ Max
DC
6 GHz
16
19 dBm
34
dBm
13
16 dB
3.3 3.5
4
dB
4.6
5
V
20
60 mA
DC to
>6000
5.5
11.3
11.3
10.2 11.4
11.5
11.5
9.9
0.05
7.6
<1.8:1
<2.5:1
<1.8:1
<2.5:1
34.5
18.5
16.5
MHz
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
142
1.4x103
3.4x105
1.8x109
°C
Years†
Years†
Years†
Copyright © 2000
Rev. 0.2,2000-12-15
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
Page 3
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