T15M256A データシートの表示（PDF） - Taiwan Memory Technology

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T15M256A

32K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

CAPACITANCE

(Vcc = 5V, Ta = 25°C, f = 1 MHz)

PARAMETER

Input Capacitance

Input/ Output Capacitance

SYMBOL

CIN

CI /O

CONDITION

VIN = 0V

VOUT= 0V

Note: These parameters are sampled but not 100% tested.

T15M256A

MAX.

6

8

UNIT

pF

pF

AC TEST CONDITIONS

PARAMETER

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Reference Level

Output Load

CONDITIONS

0V to 3V

3 ns

1.5V

CL =30pF,IOH/IOL= -4mA/8mA

AC TEST LOADS AND WAVEFORM

DQ

3.3V

OUTPUT

Z0 = 50 ohm

50 ohm

Vt =1.5V

Fig.1

30 pF

DQ

Z0 = 50

50

ohm

5 pF

ohm Vt =1.5V

Fig.3

R1 320 ohm

3.3V

R1 320 ohm

30pF

Including

Jig and

Scope

Fig.2

OUTPUT

R2

350 ohm

5pF

R2

Including

350

Jig and

ohm

Scope

Fig.4

(For TCLZ, TOLZ, TCHZ , TOHZ, TWHZ, TOW )

3.0V

0V

3ns

90% 90%

10% 10%

3ns

Fig.5

Taiwan Memory Technology, Inc. reserves the right P. 3

to change products or specifications without notice.

Publication Date: APR. 2001

Revision:C

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