MS1006 データシートの表示（PDF） - Advanced Power Technology

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MS1006

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF AND MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

• Optimized for SSB

• 30 MHz

• 50 Volts

• Common Emitter

• Gold Metallization

• POUT = 75 W Min.

• GP = 14 dB Gain

DESCRIPTION:

The MS1006 is a 50 V Class AB epitaxial silicon NPN planar

transistor designed primarily for SSB and VHF communications.

This device utilizes emitter ballasting for improved ruggedness and

reliability.

MS1006

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PDISS

TJ

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

TSTG

Storage Temperature

Value

Unit

110

V

55

V

4.0

V

3.25

A

127

W

+200

°C

-65 to +150

°C

Thermal Data

RTH(j-c)

Junction-Case Thermal Resistance

2.0

°C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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