MS1001 データシートの表示（PDF） - Advanced Power Technology
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MS1001 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 12.5 VOLTS
• IMD = -32 dBc
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• POUT = 75 WATTS
• GP = 13dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1001 is a 12.5V Class C silicon NPN transistor
designed primarily for HF communications. Diffused
emitter resistors provide infinite VSWR capability
under rated operating conditions.
MS1001
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Total Dissipation
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Value
36
18
4.0
20
270
200
-65 to +150
0.65
Unit
V
V
V
A
W
ºC
ºC
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM
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