MS1000 データシートの表示（PDF） - Advanced Power Technology
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MS1000 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 28 VOLTS
• IMD = -30 dB
• GOLD METALLIZATION
• POUT = 125 WATTS
• GP = 15dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1000 is a 28V Class A silicon NPN planar transistor
designed primarily for SSB communications. Diffused
emitter ballast provide infinite VSWR capability
under rated operating conditions.
MS1000
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Value
65
36
4.0
20
270
200
-65 to +150
0.65
Unit
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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