MMBTA92LT3G データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

一致するリスト

MMBTA92LT3G

High Voltage Transistors PNP Silicon

ON Semiconductor 

MMBTA92LT1G, MMBTA93LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3)

(IC = −1.0 mAdc, IB = 0)

MMBTA92

MMBTA93

Collector −Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

MMBTA92

MMBTA93

Emitter −Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −200 Vdc, IE = 0)

(VCB = −160 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = −3.0 Vdc, IC = 0)

MMBTA92

MMBTA93

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

Both Types

Both Types

(IC = −30 mAdc, VCE = −10 Vdc)

Collector −Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

Base−Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain — Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

Collector−Base Capacitance

(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

MMBTA92

MMBTA93

MMBTA92

MMBTA93

MMBTA92

MMBTA93

Symbol

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

Ccb

Min

−300

−200

−300

−200

−5.0

−

−

−

25

40

25

25

−

−

−

50

−

−

Max

Unit

−

−

−

−

−

−0.25

−0.25

−0.1

Vdc

Vdc

Vdc

mAdc

mAdc

−

−

−

−

−

Vdc

−0.5

−0.5

−0.9

Vdc

−

MHz

pF

6.0

8.0

300

250

200

150

100

50

0

0.1

TJ = +125°C

25°C

-55°C

1.0

10

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

VCE = 10 Vdc

100

http://onsemi.com

2

Share Link: