MMBT4403WT1G(2005) データシートの表示（PDF） - ON Semiconductor
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MMBT4403WT1G Datasheet PDF : 6 Pages
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MMBT4403WT1
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
8
6
IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
4
IC = 100 mA, RS = 1.6 kW
6
IC = 50 mA
100 mA
4
500 mA
1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 8. Frequency Effects
50 100
0
50 100 200
500 1 k 2 k
5 k 10 k 20 k 50 k
RS, SOURCE RESISTANCE (OHMS)
Figure 9. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
1000
100 k
700
50 k
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
500
20 k
300
200
100
70
50
30
0.1
20
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
5.0 7.0 10
10 k
5k
2k
1k
500
200
100
0.1
500
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
100
50
2.0
20
1.0
MMBT4403LT1 UNIT 1
10
MMBT4403LT1 UNIT 2
0.5
5.0
0.2
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
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