MMBT6520LT1 データシートの表示（PDF） - Leshan Radio Company,Ltd

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MMBT6520LT1

High Voltage Transistor

Leshan Radio Company,Ltd 

LESHAN RADIO COMPANY, LTD.

MMBT6520LT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

ON CHARACTERISTICS

DC Current Gain

(I C = –1.0 mAdc, V CE = –10 Vdc)

(I C = –10mAdc, V CE = –10 Vdc)

(I C = –30 mAdc, V CE = –10 Vdc)

(I C = –50 mAdc, V CE = –10 Vdc)

(I C = –100 mAdc, V CE = –10 Vdc)

Collector–Emitter Saturation Voltage

(I C = –10mAdc, I B = –1.0mAdc)

(I C = –20 mAdc, I B = –2.0 mAdc)

(I C = –30 mAdc, I B = –3.0mAdc)

(I C = –50 mAdc, I B = –5.0 mAdc)

Base – Emitter Saturation Voltage

(I C = –10mAdc, I B = –1.0mAdc,)

(I C = –20mAdc, I B = –2.0mAdc,)

(I C = –30mAdc, I B = –3.0mAdc,)

Base–Emitter On Voltage

(I C = –100mAdc, V CE = –10V )

hFE

20

30

30

20

15

VCE(sat)

—

—

—

—

VBE(sat)

—

—

—

V BE(on)

—

SMALL–SIGNAL CHARACTERISTICS

Current Gain–Bandwidth Product

(V CE = –20 V, I C = –10mA, f = 20 MHz)

fT

40

Collector –Base Capacitance

(V CB = –20 V, f = 1.0 MHz)

C cb

—

Emitter –Base Capacitance

(V EB= –0.5 V, f = 1.0 MHz)

C eb

—

Max

—

—

200

200

—

–0.30

–0.35

–0.50

–1.0

–0.75

–0.85

–0.90

–2.0

200

6.0

100

Unit

—

Vdc

Vdc

Vdc

MHz

pF

pF

M24–2/5

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