IRFAC40 データシートの表示（PDF） - Intersil
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IRFAC40 Datasheet PDF : 7 Pages
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IRFAC40, IRFAC42
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 100oC . . . . . . . . .
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ID
ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3) (Figures 15, 16) . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFAC40
600
600
6.2
3.9
25
±20
125
1.0
570
-55 to 150
300
260
IRFAC42
600
600
5.4
3.4
22
±20
125
1.0
570
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 4)
IRFAC40
BVDSS VGS = 0V, ID = 250µA (Figure 10)
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
600
-
-
V
2.0
-
4.0
V
-
-
25
µA
-
-
250
µA
6.2
-
-
µA
IRFAC42
5.4
-
-
µA
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
IRFAC40
IGSS
rDS(ON)
VGS = ±20V
VGS = 10V, ID = 3.4A (Figures 8, 9)
-
-
±100 nA
-
0.97 1.2
Ω
IRFAC42
-
1.2 1.6
Ω
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs
VDS ≥ 50V, ID = 3.4A (Figure 12)
4.7 70
-
S
td(ON) VDD = 0.5V x Rated BVDSS, ID ≈ 6.2A, RG =
-
13
20
ns
9.1Ω, RL = 47Ω, VGS = 10V (Figures 17, 18)
tr
MOSFET Switching Times are Essentially
-
18
27
ns
Independent of Operating Temperature
td(OFF)
-
55
83
ns
tf
-
20
30
ns
Qg(TOT) VGS = 10V, ID = 6.2A, VDSS = 0.8 x Rated
-
40
60
nC
BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Qgs Operating Temperature
-
5.5
-
nC
Qgd
-
20
-
nC
5-2
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