MGA-665P8 データシートの表示（PDF） - HP => Agilent Technologies
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MGA-665P8 Datasheet PDF : 14 Pages
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1. Absolute Maximum Ratings[1]
Symbol Parameter
Units
Absolute Maximum
VD
Supply Voltage[2]
V
6
VC
Control Voltage[2]
V
6
ID
Drain Current[2]
mA
45.6
Pdiss
Total Power Dissipation[3]
W
0.27
Pin max. RF Input Power
dBm
13
TCH
TSTG
qch_b
Channel Temperature
Storage Temperature
Thermal Resistance[4]
°C
°C
°C/W
150
-65 to 150
44.76
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C. Derate 29 mW/°C for TB > 133°C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
2. Product Consistency Distribution Charts at 5.25 GHz, 3.0 V, Id = 20.5 mA[5,6]
160
Stdev = 0.067
120
80
+3 Std
40
0
1.2 1.3 1.4 1.5 1.6 1.7
NF (dB)
Figure 1. NF; nominal = 1.45.
180
Stdev = 0.23
150
120
–3 Std
90
60
30
0
17
17.5
18
18.5
19
OIP3 (dB)
Figure 2. OIP3; LSL = 17.8, nominal = 18.2.
180
Stdev = 0.20
150
120
–3 Std
90
+3 Std
400
Stdev = 0.11
300
200 –3 Std
+3 Std
60
100
30
0
15
16
17
GAIN (dB)
0
11
11.5
12
P1dB (dB)
Figure 3. Gain (dB); nominal = 16 dB.
Figure 4. P1dB; LSL = 11, nominal = 11.4.
Notes:
5. Distribution data sample size is 500 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
6. Measurements are made on production test board described in Figure 5, which represents a trade-off between optimal OIP3, P1dB, Gain and NF.
Circuit losses have been de-embedded from actual measurements
2
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