CM200TU-5F データシートの表示（PDF） - MITSUBISHI ELECTRIC

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CM200TU-5F

HIGH POWER SWITCHING USE

MITSUBISHI ELECTRIC  

MAXIMUM RATINGS (Tj = 25°C)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

TC = 25°C

Pulse

TC = 25°C

Pulse

TC = 25°C

Conditions

Main Terminal to base plate, AC 1 min.

Main Terminal M5

Mounting holes M5

Typical value

MITSUBISHI IGBT MODULES

CM200TU-5F

HIGH POWER SWITCHING USE

(Note 2)

(Note 2)

Ratings

250

±20

200

400

200

400

600

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5

680

Unit

V

V

A

A

W

°C

°C

V

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

ICES

Parameter

Collector cutoff current

Test conditions

VCE = VCES, VGE = 0V

Limits

Min.

Typ.

—

—

VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V

3.0

4.0

IGES

Gate leakage current

VGE = VCES, VCE = 0V

—

Tj = 25°C

—

VCE(sat) Collector to emitter saturation voltage Tj = 125°C

IC = 200A, VGE = 10V

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 100V, IC = 200A, VGE = 10V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 100V, IC = 200A

—

td(off)

Turn-off delay time

VGE1 = VGE2 = 10V

—

tf

Turn-off fall time

RG = 13Ω, Inductive load switching operation

—

trr (Note 1) Reverse recovery time

IE = 200A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 200A, VGE = 0V

—

Rth(j-c)Q

Rth(j-c)R

Thermal resistance*1

IGBT part (1/6 module)

FWDi part (1/6 module)

—

—

Rth(c-f)

Contact thermal resistance

Case to fin, Thermal compoundapplied*2 (1/6 module)

—

Rth(j-c’)Q Thermal resistance*3

Tc measured point is just under the chips

—

Note 1. IE, VEC, trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

*1 : Tc measured point is indicated in OUTLINE DRAWING.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*3 : If you use this value, Rth(f-a) should be measured just under the chips.

—

1.2

1.1

—

—

—

1500

—

—

—

—

—

10.0

—

—

—

0.09

—

Max.

1

5.0

0.5

1.7

—

55

3.5

1.9

—

600

300

900

500

250

—

2.0

0.21

0.47

—

0.16

Unit

mA

V

µA

V

nF

nC

ns

ns

µC

V

°C/W

Sep. 2000

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