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MC100E158(2002) データシートの表示(PDF) - ON Semiconductor

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MC100E158
(Rev.:2002)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC100E158 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MC10E158, MC100E158
100E SERIES PECL DC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V (Note 1)
0°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
VOH
VOL
VIH
VIL
IIH
Power Supply Current
Output HIGH Voltage (Note 2)
Output LOW Voltage (Note 2)
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
33
40
33
40
38
46
mA
3975 4050 4120 3975 4050 4120 3975 4050 4120 mV
3190 3295 3380 3190 3255 3380 3190 3260 3380 mV
3835 4050 4120 3835 4120 4120 3835 4120 4120 mV
3190 3300 3525 3190 3525 3525 3190 3525 3525 mV
D
200
200
200 µA
SEL
150
150
150 µA
IIL
Input LOW Current
0.5 0.3
0.5 0.25
0.5 0.2
µA
NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.46 V / –0.8 V.
2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.
100E SERIES NECL DC CHARACTERISTICS VCCx= 0.0 V; VEE= –5.0 V (Note 1)
0°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
VOH
VOL
VIH
VIL
Power Supply Current
Output HIGH Voltage (Note 2)
Output LOW Voltage (Note 2)
Input HIGH Voltage
Input LOW Voltage
33
40
33
40
38
46
mA
–1025 –950 –880 –1025 –950 –880 –1025 –950 –880 mV
–1810 –1705 –1620 –1810 –1745 –1620 –1810 –1740 –1620 mV
–1165 –950 –880 –1165 –880 –880 –1165 –880 –880 mV
–1810 –1700 –1475 –1810 –1475 –1475 –1810 –1475 –1475 mV
IIH
Input HIGH Current
D
200
200
200 µA
SEL
150
150
150 µA
IIL
Input LOW Current
0.5 0.3
0.5 0.25
0.5 0.2
µA
NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.46 V / –0.8 V.
2. Outputs are terminated through a 50 ohm resistor to VCC–2 volts.
AC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V or VCCx= 0.0 V; VEE= –5.0 V (Note 1)
0°C
25°C
Symbol
Characteristic
Min Typ Max Min Typ Max
fMAX
tPLH
tPHL
Maximum Toggle Frequency
Propagation Delay to Output
TBD
TBD
D 225 385 550 225 385 550
SEL 400 600 775 400 600 775
tSKEW Within-Device Skew (note 1.)
60
60
tJITTER Cycle–to–Cycle Jitter
TBD
TBD
tr
Rise/Fall Time
tf
(20 - 80%)
275 425 650 275 425 650
1. 10 Series: VEE can vary +0.46 V / –0.06 V.
100 Series: VEE can vary +0.46 V / –0.8 V.
1. Within-device skew is defined as identical transitions on similar paths through a device.
85°C
Min Typ Max
TBD
225 385 550
400 600 775
60
TBD
275 425 650
Unit
GHz
ps
ps
ps
ps
http://onsemi.com
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