MAX17080 データシートの表示（PDF） - Maxim Integrated

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MAX17080

AMD 2-/3-Output Mobile Serial VID Controller

Maxim Integrated 

AMD 2-/3-Output Mobile Serial

VID Controller

ELECTRICAL CHARACTERISTICS (continued)

(Circuit of Figure 2, VIN = 12V, VCC = VDD = VIN3 = VSHDN = VPGD_IN = 5V, VDDIO = 1.8V, VOPTION = VGNDS_ = VAGND = VPGND,

VFBDC_ = VFBAC_ = VOUT3 = VCSP_ = VCSN_ = 1.2V, all DAC codes set to the 1.2V code, TA = 0°C to +85°C, unless otherwise noted.

Typical values are at TA = +25°C.)

PARAMETER

FAULT DETECTION

Output Overvoltage Trip

Threshold

(SMPS1 and SMPS2 Only)

Output Overvoltage Fault

Propagation Delay (SMPS1 and

SMPS2 only)

SYMBOL

CONDITIONS

VOVP_

Measured at

FBDC_, rising

edge

PWM mode

Skip mode and output

has not reached the

regulation voltage

Minimum OVP

threshold

tOVP FBDC_ forced 25mV above trip threshold

MIN

250

1.80

TYP

300

1.85

0.8

10

MAX UNITS

350

mV

1.90

V

µs

Output Undervoltage Protection

Trip Threshold

VUVP

Measured at FBDC_ or OUT3 with respect

to unloaded output voltage

-450

-400

-350

mV

Output Undervoltage Fault

Propagation Delay

PWRGD Threshold

tUVP FBDC_ forced 25mV below trip threshold

10

µs

Measured at

FBDC_ or OUT3

with respect to

unloaded output

voltage,15mV

hysteresis (typ)

Lower threshold,

falling edge

(undervoltage)

Upper threshold,

rising edge

(overvoltage)

-350 -300 -250

mV

+150 +200 +250

PWRGD Propagation Delay

tPWRGD

FBDC_ or OUT3 forced 25mV outside the

PWRGD trip thresholds

10

µs

PWRGD, Output Low Voltage

PWRGD Leakage Current

IPWRGD

ISINK = 4mA

High state, PWRGD forced to 5.5V, TA =

+25°C

0.4

V

1

µA

PWRGD Startup Delay and

Transition Blanking Time

tBLANK

Measured from the time when FBDC_ and

OUT3 reach the target voltage

20

µs

VRHOT Trip Threshold

Measured at THRM, with respect to VCC,

falling edge, 115mV hysteresis (typ)

29.5

30

30.5

%

VRHOT Delay

VRHOT, Output Low Voltage

VRHOT Leakage Current

THRM Input Leakage

Thermal-Shutdown Threshold

GATE DRIVERS

tVRHOT

THRM forced 25mV below the VRHOT trip

threshold, falling edge

10

µS

ISINK = 4mA

High state, VRHOT forced to 5V, TA = +25°C

0.4

V

1

µA

TA = +25°C

-100

+100

nA

TSHDN Hysteresis = 15°C

+160

°C

DH_ Gate-Driver On-Resistance

RON(DH_)

BST_ - LX_ forced

to 5V (Note 4)

High state (pullup)

Low state (pulldown)

0.9

2.5

0.7

2.5

DL_ Gate-Driver On-Resistance

DL_, high state

RON(DL_)

DL_, low state

0.7

2.0

0.25 0.6

_______________________________________________________________________________________ 5

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