MAC08BT1 データシートの表示（PDF） - Motorola => Freescale
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MAC08BT1 Datasheet PDF : 5 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SOTĆ223 Triac
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and other light
industrial or consumer applications. Supplied in surface mount package for use in
automated manufacturing.
• Sensitive Gate Trigger Current in Four Trigger Modes
• Blocking Voltage to 600 Volts
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• Devices Supplied on 1 K Reel
MAC08BT1
Series *
*Motorola preferred devices
TRIAC
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04
(SOT-223)
STYLE 11
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Blocking Voltage(1)
(1/2 Sine Wave, Gate Open, TJ = 25 to 110°C)
MAC08BT1
MAC08DT1
MAC08MT1
Symbol
VDRM
Value
200
400
600
Unit
Volts
On-State Current RMS (TC = 80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power (t < 2.0 µs)
Average Gate Power (TC = 80°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum)
THERMAL CHARACTERISTICS
IT(RMS)
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
TL
0.8
10
0.4
5.0
0.1
–40 to +110
–40 to +150
260
Amps
Amps
A2s
Watts
Watts
°C
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
RθJA
156
°C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
RθJT
25
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–40
Motorola Thyristor Device Data
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