RO-P-DS-3022 - -
1.2W C/Ku-Band Power Amplifier
7.5-13.5 GHz
Preliminary Information
Features
♦ 7.5-13.5 GHz Operation
♦ 1.2 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ Self-Aligned MSAG® MESFET Process
Primary Applications
♦ Point-to-Point
♦ Weather Radar
♦ Airborne Radar
Description
The MAAPGM0038-Die is a 3-stage 1.2 W power ampli-
fier with on-chip bias networks. This product is fully
matched to 50 ohms on both the input and output. It can
be used as a power amplifier stage or as a driver stage in
high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/
A-COM’s repeatable, high performance and highly reli-
able GaAs Multifunction Self-Aligned Gate (MSAG®)
MESFET Process. This process features silicon nitride
passivation and polyimide scratch protection.
7.5-13.5 GHz GaAs MMIC Amplifier
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, VGG = -2V, Pin = 20 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
7.5-13.5
GHz
Output Power
POUT
31
dBm
Power Added Efficiency
PAE
21
%
1-dB Compression Point
P1dB
29
dBm
Small Signal Gain
G
19
dB
Input VSWR
VSWR
4:1
Gate Current
IGG
< 12
mA
Drain Current
IDD
< 1.1
A
Output Third Order Intercept
OTOI
40
dBm
Noise Figure
NF
2nd Harmonic
2f
3rd Harmonic
3f
8
dB
-17
dBc
-34
dBc
1. TB = MMIC Base Temperature