MAAPGM0036 データシートの表示（PDF） - Tyco Electronics
部品番号
コンポーネント説明
一致するリスト
MAAPGM0036 Datasheet PDF : 7 Pages
| |||
1.2-3.2 GHz 1.2W Power Amplifier
RO-P-DS-3075
Preliminary Information
MAAPGM0036
Features
♦ 1.2 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ Self-Aligned MSAG® Process
Primary Applications
♦ 2.5-2.7 GHz MMDS
♦ GPS
♦ Radar
♦ Telemetry
Description
The MAAPGM0036 is a packaged, 2-stage, 1.2 W power
amplifier with on-chip bias networks in a bolt down ceramic
package, allowing easy assembly. This product is fully
matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high
power applications.
Each device is 100% RF tested to ensure performance
compliance. The part is fabricated using M/A-COM’s GaAs
Multifunction Self-Aligned Gate (MSAG®) MESFET Process.
M/A-COM’s MSAG process features robust silicon-like
manufacturing processes, planar processing of ion implanted
transistors and multiple implant capability enabling power,
low-noise, switch and digital FETs on a single chip. The use
of refractory metals and the absence of platinum in the gate
metal formulation prevents hydrogen poisoning when
employed in hermetic packaging.
APGM0036
YWWLLLL
Pin Number
1
2
3
4
5
6
7
8
9
10
RF Designator
No Connection
VGG
RF IN
VGG
No Connection
No Connection
VDD
RF OUT
VDD
No Connection
Maximum Operating Conditions 1
Parameter
Symbol
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF, 40% IDSS)
Quiescent DC Power Dissipated (No RF)
PIN
VDD
VGG
IDQ
PDISS
Junction Temperature
Storage Temperature
TJ
TSTG
Processing Temperature
1. Operation outside of these ranges may reduce product reliability.
Absolute Maximum
23.0
+12.0
-3.0
730
6.6
180
-55 to +150
230
Units
dBm
V
V
mA
W
°C
°C
°C
Share Link: 