MAAPGM0030-DIE データシートの表示（PDF） - Tyco Electronics
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MAAPGM0030-DIE Datasheet PDF : 6 Pages
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5.0-9.0 GHz 1W Power Amplifier
RO-P-DS-3021 A 2/6
MAAPGM0030-DIE
Maximum Operating Conditions 3
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
23.0
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF, 40% Idss)
IDQ
470
mA
Quiescent DC Power Dissipated (No RF)
PDISS
3.2
W
Junction Temperature
TJ
180
°C
Storage Temperature
TSTG
-55 to +150
°C
Die Attach Temperature
310
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Symbol
Min
Drain Supply Voltage
VDD
4.0
Gate Supply Voltage
VGG
-2.4
Input Power
PIN
Junction Temperature
TJ
Thermal Resistance
ΘJC
MMIC Base Temperature
TB
4. Maximum MMIC Base Temperature = 150°C —ΘJC* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V.
3. Adjust VGG to set IDQ.
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
Typ
Max
8.0
10.0
-2.0
-1.5
18.0
21.0
150
25
Note 4
Unit
V
V
dBm
°C
°C/W
°C
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
2
Visit www.macom.com for additional data sheets and product information.
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