MA3Z080E データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
一致するリスト
MA3Z080E Datasheet PDF : 3 Pages
| |||
Band Switching Diodes
MA3Z080D, MA3Z080E (MA80WA, MA80WK)
Silicon epitaxial planar type
For band switching
s Features
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacity CD
• S-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
35
V
Forward current (DC)
IF
100
mA
Operating ambient temperature *
Topr
−25 to +85
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: Maximum ambient temperature during operation
0.3+–00..01
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Unit: mm
0.15+–00..0150
EIAJ: SC-70
SMini3-G1 Package
MA3Z080D MA3Z080E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2
Marking Symbol
• MA3Z080D: M1X • MA3Z080E: M1Y
Internal Connection
3
3
s Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance *
IR
VR = 33 V
VF
IF = 100 mA
CD
VR = 6 V, f = 1 MHz
rf
IF = 2 mA, f = 100 MHz
Note) 1. Each characteristic is a standard for individual diode
2. Rated input/output frequency: 100 MHz
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
2
D
Min
1
2
E
Typ Max Unit
0.01 100 nA
0.92 1.0
V
0.9 1.2
pF
0.65 0.85
Ω
Publication date: April 2002
Note) The part number in the parenthesis shows conventional part number.
SKG00013BED
1
Share Link: 