MA3J742 データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
一致するリスト
MA3J742 Datasheet PDF : 4 Pages
| |||
Schottky Barrier Diodes (SBD)
MA3J742 (MA742)
Silicon epitaxial planar type
For switching
I Features
• Two MA3X716 (MA716) is contained in one package (series
connection)
• Low forward voltage VF , optimum for low voltage rectification
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• S-Mini type 3-pin package
0.3+–00.1
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
5°
Unit: mm
0.15+–00..015
0.9±0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current (DC) Single
IF
30
mA
Series *
20
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SMini3-F1 Package
Marking Symbol: M1U
Peak forward current Single
IFM
150
mA
Series *
110
Junction temperature
Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
Internal Connection
3
Note) *: Value per chip
I Electrical Characteristics Ta = 25°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
h
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
1
µA
0.4
V
1
1.5
pF
1
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00056AED
1
Share Link: 