MA3D760 データシートの表示（PDF） - Panasonic Corporation

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MA3D760

Silicon epitaxial planar type (cathode common)

Panasonic Corporation 

Schottky Barrier Diodes (SBD)

MA3D760 (MA7D60)

Silicon epitaxial planar type (cathode common)

For switching mode power supply

9.9±0.3

Unit: mm

4.6±0.2

2.9±0.2

■ Features

φ 3.2±0.1

• Low forward voltage VF

• High dielectric breakdown voltage: > 5 kV

• Easy-to-mount, due to its V cut lead end

1.4±0.2

1.6±0.2

2.6±0.1

■ Absolute Maximum Ratings TC = 25°C

0.8±0.1

0.55±0.15

/ Parameter

Symbol Rating

Unit

2.54±0.30

e ) Repetitive peak reverse voltage

VRRM

90

V

c type Forward current (Average)

IF(AV)

5

A

n d ge. ed Non-repetitive peak forward

IFSM

80

A

sta tinu surge current *

a e cle con Junction temperature

lifecy d, dis Storage temperature

Tj

−40 to +125

°C

Tstg

−40 to +125

°C

n u duct type Note) *: Half sine wave; 10 ms/cycle

5.08±0.50

123

1: Anode

2: Cathode

(common)

3: Anode

TO-220D-A1 Package

ainteontinincludestyfpoell,opwlianngefdoudrisPcroontinued ■ Electrical Characteristics TC = 25°C ± 3°C

c tinued ance Parameter

Symbol

Conditions

Min Typ Max Unit

M is con inten Forward voltage

/Dis ma Reverse current

D ance type, Thermal resistance (j-c)

VF

IR

Rth(j-c)

IF = 2.5 A, TC = 25°C

VR = 90 V, TC = 25°C

0.85

V

1

mA

3.0 °C/W

inten nce Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

Ma tena 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

ain and the leakage of current from the operating equipment.

(planed m 3. Absolute frequency of input and output is 200 MHz.

Publication date: April 2004

Note) The part number in the parenthesis shows conventional part number.

SKH00047BED

1

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