MA3D752 データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
一致するリスト
MA3D752 Datasheet PDF : 3 Pages
| |||
Schottky Barrier Diodes (SBD)
MA3D752 (MA7D52), MA3D752A (MA7D52A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
φ 3.2±0.1
• Low forward voltage VF
• High dielectric breakdown voltage: > 5 kV
• Easy-to-mount, due to its V cut lead end
1.4±0.2
1.6±0.2
2.6±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.8±0.1
0.55±0.15
/ Parameter
Symbol Rating
Unit
2.54±0.30
e ) Repetitive peak MA3D752
VRRM
40
V
c type reverse voltage MA3D752A
45
n d tage. ued Non-repetitive peak MA3D752
VRSM
40
V
le s ntin forward surge voltage
a e cyc isco Forward current (Average)
IF(AV)
20
A
life d, d Non-repetitive peak forward
IFSM
120
A
n u duct type surge current *
te tin Pro ed Junction temperature
four ntinu Storage temperature
Tj
−40 to +125
°C
Tstg
−40 to +125
°C
ing isco Note) *: Half sine wave; 10 ms/cycle
5.08±0.50
123
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
ain onincludestyfpoell,opwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
c tinued ance Parameter
Symbol
Conditions
Min Typ Max Unit
M is con inten Forward voltage
/Dis ma Reverse current
MA3D752
D ance type, MA3D752A
ten ce Thermal resistance (j-c)
VF
IR
Rth(j-c)
IF = 10 A, TC = 25°C
VR = 40 V, TC = 25°C
VR = 45 V, TC = 25°C
0.55
V
5
mA
5
3.0 °C/W
Main tenan Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
ain 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
d m and the leakage of current from the operating equipment.
(plane 3. Absolute frequency of input and output is 100 MHz.
Publication date: April 2004
Note) The part numbers in the parenthesis show conventional part number.
SKH00044BED
1
Share Link: 