MA2SD32 データシートの表示（PDF） - Panasonic Corporation
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MA2SD32 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA2SD32
Silicon epitaxial planar type
For super high speed switching
0.80+–00..0035
Unit: mm
0.60+–00..0035
0.12+–00..0025
1
■ Features
• IF(AV) = 200 mA rectification is possible.
• Small reverse current: IR < 5 µA (at VR = 30 V)
0.01±0.01
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
2
0.30±0.05
5˚
0+–00.05
/ Reverse voltage
VR
30
V
Repetitive peak reverse voltage VRRM
30
V
e e) Forward current (Average)
IF(AV)
200
mA
c typ Peak forward current
IFM
300
mA
n d tage. ued Non-repetitive peak forward
IFSM
1
A
le s ntin surge current *
a e cyc isco Junction temperature
n u t life ed, d Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
duc typ Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Marking Symbol: 8H
1: Anode
2: Cathode
SSMini2-F1 Package
te tinwing foudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C
in n s follo laned Parameter
Symbol
Conditions
Min Typ Max Unit
a o lude e, p Reverse current
c tinued incance typ Forward voltage
M is con inten Terminal capacitance
ce/Dis pe, ma Reverse recovery time *
IR1
VR = 10 V
IR2
VR = 30 V
VF
IF = 200 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
0.5
µA
5
0.49 0.56
V
25
pF
2
ns
D tenan ce ty Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
in an 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Ma inten and the leakage of current from the operating equipment.
ma 3. Absolute frequency of input and output is 250 MHz
(planed 4. *: trr measurement circuit
Pulse Generator
(PG-10N)
Rs = 50 Ω
Bias Application Unit (N-50BU)
A
Wave Form
Analyzer
(SAS-8130)
Ri = 50 Ω
VR
Input Pulse
tr
tp
t
10%
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Publication date: October 2003
SKH00132AED
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
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