MA2SD19(2001) データシートの表示（PDF） - Panasonic Corporation
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MA2SD19 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD))
MA2SD19
Silicon epitaxial planar type
For super high speed switching
I Features
• IF(AV) = 200 mA rectification is possible
• Low forward voltage: VF < 0.47 V (at IF = 200 mA)
• Small reverse current: IR < 20 µA (at VR = 10 V)
• SS-Mini type 2-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
20
V
Repetitive peak reverse-voltage
VRRM
20
V
Non-repetitive peak forward-
IFSM
1
A
surge-current *
Peak forward current
Average forward current
Junction temperature
Storage temperature
IFM
300
mA
IF(AV)
200
mA
Tj
125
°C
Tstg
−55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.80+–00..0035
1
Unit: mm
0.60+–00..0035
0.12+–00..0025
0.01±0.01
2
0.30±0.05
5°
0+–00.05
1 : Anode
2 : Cathode
EIAJ : SC-79
SSMini2-F1 Package
Marking Symbol: 3L
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR
VR = 10 V
VF
IF = 200 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
15
µA
0.47 V
15
pF
2
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: August 2001
SKH00027AED
1
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