MA738(2001) データシートの表示（PDF） - Panasonic Corporation
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MA738 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA2Q738 (MA738)
Silicon epitaxial planar type
For high-frequency rectification
I Features
• Forward current (average) IF(AV): 1.5 A type
• Reverse voltage (DC value) VR: 40 V
• Allowing automatic insertion with the emboss taping
4.4 ± 0.3
Unit : mm
0 to 0.05
2
1
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
40
V
Repetitive peak reverse voltage
VRRM
40
V
Average forward current*1
IF(AV)
1.5
A
Non-repetitive peak forward
IFSM
60
A
surge current*2
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
Note) *1 : With a printed-circuit board (copper foil area 2.5 mm × 2.5 mm
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1.2 ± 0.4
+ 0.4
5.0 − 0.1
1.2 ± 0.4
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PD
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VR = 40 V
VF
IF = 2 A
Ct
VR = 10 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
2
mA
0.55
V
70
pF
50
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
524
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