MA01503D データシートの表示（PDF） - Tyco Electronics
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MA01503D Datasheet PDF : 7 Pages
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RO-P-DS-3003 - -
X-Band Limiter/Low Noise Amplifier
8.5 –12.0 GHz
Features
♦ 8.5 to 12.0 GHz Operation
♦ 10 Watt CW On-chip Limiter
♦ Balanced Design –Excellent Return Loss
♦ Self-Aligned MSAG® MESFET Process
8.5-12.0 GHz GaAs MMIC Amplifier
Primary Applications
♦ Weather Radar
♦ Airborne Radar
Description
The MA01503D is a balanced 3-stage low noise amplifier
with on-chip, receiver protecting 10 Watt limiter. This
product is fully matched to 50 ohms on both the input and
output.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM’s repeatable, high performance and highly reliable GaAs
Multifunction Self-Aligned Gate (MSAG®) MESFET Process.
This process features silicon oxi-nitride passivation and poly-
imide scratch protection.
Electrical Characteristics: TB = 25°C1, Z0 = 50Ω, VDD = 5V, VGG = -5V
Parameter
Bandwidth
Small Signal Gain
1-dB Compression Point
Input Return Loss
Output Return Loss
Noise Figure
Drain Current
Gate Current
Input Third Order Intercept Point
Drain Current (Max at Pin= 10W)
Power Handling (CW up to 30 minutes)
Symbol
f
Gn
P1dB
IRL
ORL
NF
IDD
IGG
ITOI
IDMAX
PRF
Minimum
8.5
17
13
13
Typical
19
20
18
20
2.7
190
4
8
60+IDD
10
Maximum
12.0
23
3.5
240
10
Units
GHz
dB
dBm
dB
dB
dB
mA
mA
dBm
mA
W
1. TB = MMIC Base Temperature
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