MA3J700 データシートの表示（PDF） - Panasonic Corporation
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MA3J700 Datasheet PDF : 4 Pages
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Schottky Barrier Diodes (SBD)
MA3J700 (MA10700)
Silicon epitaxial planar type
For high frequency rectification
I Features
• IF(AV) = 500 mA rectification is possible
• Optimum for high frequency rectification because of its short re-
verse recovery time (trr)
• S-Mini type 3-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
40
V
Repetitive peak reverse-voltage
VRRM
40
V
Average forward current
IF(AV)
500
mA
Non-repetitive peak forward-
IFSM
2
A
surge-current *
Junction temperature
Storage temperature
Tj
125
°C
Tstg
−55 to +150
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.3+–00.1
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
5°
Unit: mm
0.15+–00..015
0.9±0.1
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Marking Symbol: M2W
Internal Connection
3
1
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR
VR = 35 V
VF
IF = 500 mA
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
100 µA
0.55
V
60
pF
5
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
tr
tp
10%
t
IF
trr
t
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00052AED
1
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